Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1
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Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

Konakova, R.V. ; Red’ko, S.M. ; Milenin, V.V. ; Red’ko, R.A.

Інший ID: PACS 78.55.Cr, 71.55.Eq

URI: http://dspace.nbuv.gov.ua/handle/123456789/118352

Посилання: Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals / R.V. Konakova, S.M. Red’ko, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 75-79. — Бібліогр.: 18 назв. — англ.

Дата: 2014

Завантажень: 429

Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

Анотація:

The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induction. The defect structure transformations were inferred from the radiative recombination spectra in the 0.6-2.5 μm at 77 K. A possible mechanism of observed modifications related to the electron spin transformation is discussed.

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