Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1
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dc.contributor.author	Konakova, R.V.
dc.contributor.author	Red’ko, S.M.
dc.contributor.author	Milenin, V.V.
dc.contributor.author	Red’ko, R.A.
dc.date.accessioned	2017-05-30T05:34:44Z
dc.date.available	2017-05-30T05:34:44Z
dc.date.issued	2014
dc.identifier.citation	Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals / R.V. Konakova, S.M. Red’ko, V.V. Milenin, R.A. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 75-79. — Бібліогр.: 18 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 78.55.Cr, 71.55.Eq
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118352
dc.description.abstract	The long-term transformations of photoluminescence of GaP, GaAs and InP single crystals treated with pulsed weak magnetic fields are obtained. The treatments were performed in two regimes, namely, single-pulse (τ = 30 ms) and multi-pulse (τ = 1.2 ms) ones, at varying magnitudes of magnetic induction. The defect structure transformations were inferred from the radiative recombination spectra in the 0.6-2.5 μm at 77 K. A possible mechanism of observed modifications related to the electron spin transformation is discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of weak magnetic fields treatment on photoluminescence of III-V single crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA