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Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1
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Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs
Інший ID:
PACS: 73.20. Fz, 73.20. Jc, 73.50. Fq
Посилання:
Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs / M.I. Slutskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 68-71. — Бібліогр.: 15 назв. — англ.
Підтримка:
I wish to thank Professor К.Н. Ploog for permission to use the samples prepared in his laboratory and Professor O.G. Sarbey for useful discussions.
Дата:
2004
Переглядів:
756
Завантажень:
248
Анотація:
The electrical field dependencies of current I and its variation under phonon pulses - ΔIph, were measured in δ-doped GaAs with n = 5*10¹¹ nm⁻². It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase with E, and while the change in the first value was less than 5%, the second one increased by more than 3 times. The proposed explanation of experimental results is based on the nearness of the studied structure to a metal-insulator transition.
