Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 1
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dc.contributor.author	Slutskii, M.I.
dc.date.accessioned	2017-05-28T17:43:52Z
dc.date.available	2017-05-28T17:43:52Z
dc.date.issued	2004
dc.identifier.citation	Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs / M.I. Slutskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 1. — С. 68-71. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 73.20. Fz, 73.20. Jc, 73.50. Fq
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118116
dc.description.abstract	The electrical field dependencies of current I and its variation under phonon pulses - ΔIph, were measured in δ-doped GaAs with n = 5*10¹¹ nm⁻². It was shown that if E< 1 V/cm and T = 2 K, E/I, and E/Iph linearly increase with E, and while the change in the first value was less than 5%, the second one increased by more than 3 times. The proposed explanation of experimental results is based on the nearness of the studied structure to a metal-insulator transition.	uk_UA
dc.description.sponsorship	I wish to thank Professor К.Н. Ploog for permission to use the samples prepared in his laboratory and Professor O.G. Sarbey for useful discussions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Linear field dependencies of conductivity and phonon-induced conductivity of 2D gas in δ-doped GaAs	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA