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Stress-induced effects in light scattering by plasmons in p-type germanium
Репозиторій DSpace/Manakin
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4
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Stress-induced effects in light scattering by plasmons in p-type germanium
Інший ID:
PACS: 78.40. Fy, 73.20. Mf
Посилання:
Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ.
Підтримка:
The authors are grateful to F.T. Vasko and O.G. Sarbey
for the discussion of results and to V.M. Vasetski for
his assistance in carrying out the experiments.
Дата:
2003
Переглядів:
578
Завантажень:
268
Анотація:
Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation.
