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dc.contributor.author |
Poroshin, V.N. |
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dc.contributor.author |
Gaydar, A.V. |
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dc.contributor.author |
Abramov, A.A. |
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dc.contributor.author |
Tulupenko, V.N. |
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dc.date.accessioned |
2017-05-28T16:38:46Z |
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dc.date.available |
2017-05-28T16:38:46Z |
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dc.date.issued |
2003 |
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dc.identifier.citation |
Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 78.40. Fy, 73.20. Mf |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118080 |
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dc.description.abstract |
Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation. |
uk_UA |
dc.description.sponsorship |
The authors are grateful to F.T. Vasko and O.G. Sarbey
for the discussion of results and to V.M. Vasetski for
his assistance in carrying out the experiments. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Stress-induced effects in light scattering by plasmons in p-type germanium |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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