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Stress-induced effects in light scattering by plasmons in p-type germanium

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dc.contributor.author Poroshin, V.N.
dc.contributor.author Gaydar, A.V.
dc.contributor.author Abramov, A.A.
dc.contributor.author Tulupenko, V.N.
dc.date.accessioned 2017-05-28T16:38:46Z
dc.date.available 2017-05-28T16:38:46Z
dc.date.issued 2003
dc.identifier.citation Stress-induced effects in light scattering by plasmons in p-type germanium / V.N. Poroshin, A.V. Gaydar, A.A. Abramov, V.N. Tulupenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 425-430. — Бібліогр.: 19 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 78.40. Fy, 73.20. Mf
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118080
dc.description.abstract Infrared light scattering by plasmons in p-Ge has been studied under uniaxial stress along the [110] axis with polarization of incident light parallel to the stress direction. It is found that the deformation of the crystal results in an increase of the plasma frequency and lowering the asymmetry of the line by plasma scattering. These effects are explained by taking into account the change of contribution to the dielectric constant caused by the intra- and intersubband transitions as a consequence of variation of the energy band of p-Ge related with deformation. uk_UA
dc.description.sponsorship The authors are grateful to F.T. Vasko and O.G. Sarbey for the discussion of results and to V.M. Vasetski for his assistance in carrying out the experiments. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Stress-induced effects in light scattering by plasmons in p-type germanium uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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