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періодичних видань НАН України
періодичних видань НАН України
Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1
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| dc.contributor.author | Budzulyak, S.I. | |
| dc.contributor.author | Ermakov, V.M. | |
| dc.contributor.author | Kyjak, B.R. | |
| dc.contributor.author | Kolomoets, V.V. | |
| dc.contributor.author | Machulin, V.F. | |
| dc.contributor.author | Novoselets, M.K. | |
| dc.contributor.author | Panasjuk, L.I. | |
| dc.contributor.author | Sus', B.B. | |
| dc.contributor.author | Venger, E.F. | |
| dc.date.accessioned | 2017-05-27T16:45:47Z | |
| dc.date.available | 2017-05-27T16:45:47Z | |
| dc.date.issued | 2003 | |
| dc.identifier.citation | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals / S.I. Budzulyak, V.M. Ermakov, B.R. Kyjak, V.V. Kolomoets, V.F. Machulin, M.K. Novoselets, L.I. Panasjuk, B.B. Sus', E.F. Venger // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 37-40. — Бібліогр.: 16 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 71.30.+h | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117939 | |
| dc.description.abstract | Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator (MI) transition determined by peculiarities of the c-band energy spectrum transformation in n-Si and n-Ge are discussed. The main statements of the effective mass-donor concept for hydrogen-like impurities in monocrystalline semiconductors were verified. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
