Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
Інший ID:
PACS 73.40.Cg, Ns; 85.40.-e
Посилання:
Effect of microwave treatment on current flow mechanism in
ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ.
Підтримка:
The author is indebted to research workers of the
V. Lashkaryov Institute of Semiconductor Physics of the
National Academy of Sciences of Ukraine – Prof.
R.V. Konakova, Prof. A.V. Sachenko, Prof.
L.A. Matveeva, Dr. V.G. Lyapin for fruitful
consultations and interest in this work and researcher
E.Yu. Kolyadina for measurement of radii of curvatures
of the samples.
Дата:
2013
Переглядів:
704
Завантажень:
423
Анотація:
The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic
contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained
dependences are described using a model of current flow via metal shunts associated
with dislocations, the current being limited by diffusion supply of electrons. It is shown
that microwave treatment increases the dislocation density in the near-contact region of
contact structure and reduces the relative spread of resistivity values of contacts formed
on the wafer.
