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періодичних видань НАН України
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3
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| dc.contributor.author | Sheremet, V.N. | |
| dc.date.accessioned | 2017-05-26T13:45:57Z | |
| dc.date.available | 2017-05-26T13:45:57Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN / V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 3. — С. 280-284. — Бібліогр.: 14 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 73.40.Cg, Ns; 85.40.-e | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117729 | |
| dc.description.abstract | The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow via metal shunts associated with dislocations, the current being limited by diffusion supply of electrons. It is shown that microwave treatment increases the dislocation density in the near-contact region of contact structure and reduces the relative spread of resistivity values of contacts formed on the wafer. | uk_UA |
| dc.description.sponsorship | The author is indebted to research workers of the V. Lashkaryov Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine – Prof. R.V. Konakova, Prof. A.V. Sachenko, Prof. L.A. Matveeva, Dr. V.G. Lyapin for fruitful consultations and interest in this work and researcher E.Yu. Kolyadina for measurement of radii of curvatures of the samples. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
