Перегляд за автором "Kulibaba, V.I."

Сортувати за: Порядок: Результатів:

  • Angular distributions of gamma-radiation of 1.2 GeV electrons in silicon monocrystals of great thickness 
    Bochek, G.L.; Fomin, S.P.; Kulibaba, V.I.; Lapko, V.P.; Maslov, N.I.; Shramenko, B.I.; Shul’ga, N.F. (Вопросы атомной науки и техники, 2001)
  • Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors 
    de Haas, A.P.; Kuijer, P.; Kulibaba, V.I.; Maslov, N.I.; Perevertailo, V.L.; Ovchinnik, V.D.; Potin, S.M.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2000)
    The characteristics and radiation tolerance of a double-sided microstrip detector (DSMD) were studied, and the suitability of the detector to the ALICE experiment requirements was analyzed. The sensitive area of the silicon ...
  • Control complex for a double-sided microstrip detector production and tests 
    Kaplij, A.A.; Kulibaba, V.I.; Kuijer, P.; Maslov, N.I.; Ovchinnik, V.D.; Potin, S.M.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2000)
    The controlling system for detector silicon and for a double-sided microstrip detectors (DSMD) characteristics tests is described.
  • Development and application of a silicon coordinate detectors 
    Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Potin, S.M.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2003)
    An attempt is made to consider general approach and the techniques for development, investigation and application of multichannel silicon coordinate detectors.
  • Examination ofmulti-layer silicon detector in measurementofelectron spectrumfor beta-decayof ⁹⁰SR- ⁹⁰Y 
    Bochek, G.L.; Golovash, A.S.; Kosinov, A.V.; Kotlyar, V.V.; Kulibaba, V.I.; Maslov, N.I.; Mazilov, A.A.; Naumov, S.V.; Ovchinnik, V.D. (Вопросы атомной науки и техники, 2005)
    Brief survey of recent achievements in investigations of nuclear beta decays is given with some emphasis on superallowed 0⁺→ 0⁺ Fermi transitions between T=1 nuclear states. Progress in construction of a detecting system ...
  • Intensive X-ray source optimization 
    Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Ovchinnik, V.D. (Вопросы атомной науки и техники, 2005)
    Possibility of optimization of an intensive source of the electron radiation in crystals based on the Compton scattering of X-radiation is considered.
  • On the opportunity of β-radiation detection by SI detectors in the Chernobyl failure area 
    Kulibaba, V.I.; Mazilov, A.A.; Maslov, N.I. (Вопросы атомной науки и техники, 2006)
    It is demonstrated that a double silicon detector operating in the coincidence mode [1,2] can be used in radiationmonitoring instruments for registering β-radiation at high γ-background conditions, e.g., in Chernobyl.
  • Orientation effects in ultrarelativistic electron transmission through a single crystal 
    Blazhevich, S.V.; Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Shramenko, B.I. (Вопросы атомной науки и техники, 2001)
    The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under ...
  • Photonuclear transmutation doping of the n-type detector silicon 
    Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Ovchinnik, V.D.; Potin, S.M.; Ryabka, P.M. (Вопросы атомной науки и техники, 2002)
    New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority ...
  • Readout electronics for multichannel detectors 
    Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Prokhorets, I.M. (Вопросы атомной науки и техники, 2001)
    Readout electronics based on the 128-channel chip “Viking” (IDE AS inc., Norway) is considered. The chip “Viking” integrates 128 low noise charge-sensitive preamplifiers with tunable CR-(RC)² shapers, analog memory and ...
  • Silicon pad detectors for a simple tracking system and multiplicity detectors creation 
    Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2001)
    Silicon pad detectors are working at room temperatures, what is very convenient for creation of simple tracking system and multiplicity detectors. Silicon pad detectors are studied to create a compact detecting systems for ...
  • Temperature effect on the characteristics and lifetime of semiconductor detectors 
    Vasiliyev, G.P.; Kosinov, A.V.; Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Yalovenko, V.I. (Вопросы атомной науки и техники, 2006)
    The paper reports the results from studies into the effect of temperature on the performance characteristics of planar silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated ...