Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Photonuclear transmutation doping of the n-type detector silicon
Репозиторій DSpace/Manakin
JavaScript is disabled for your browser. Some features of this site may not work without it.
Photonuclear transmutation doping of the n-type detector silicon
Інші назви:
Фотоядерное трансмутационное легирование детекторного кремния n-типа
Тема:
Experimental methods and processing of data
Інший ID:
PACS: 29.40.Wk
Посилання:
Photonuclear transmutation doping of the n-type detector silicon / G.L. Bochek, V.I. Kulibaba, N.I. Maslov, V.D. Ovchinnik, S.M. Potin, P.M. Ryabka // Вопросы атомной науки и техники. — 2002. — № 2. — С. 52-54. — Бібліогр.: 6 назв. — англ.
Підтримка:
The authors are very thankful to many colleagues for the valuable discussions and constructive remarks. This work was supported by STCU under the Grant № 285.
Дата:
2002
Переглядів:
810
Завантажень:
361
Анотація:
New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector silicon resistivity from about 1 to 5 kOhm x cm and for correction of the resistivity distribution over the silicon bulk. The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Egmax ~ 25 MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the bremsstrahlung of 25 MeV energy electrons.
