Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Orientation effects in ultrarelativistic electron transmission through a single crystal
Репозиторій DSpace/Manakin
JavaScript is disabled for your browser. Some features of this site may not work without it.
Orientation effects in ultrarelativistic electron transmission through a single crystal
Інші назви:
Ориентационные эффекты при прохождении ультрарелятивистских электронов через монокристалл
Тема:
Electrodynamics of high energies in matter and strong fields
Інший ID:
PACS:05.45.+b; 29.27Ac
Посилання:
Orientation effects in ultrarelativistic electron transmission through a single crystal / S.V. Blazhevich, G.L. Bochek, V.I. Kulibaba, N.I. Maslov, B.I. Shramenko // Вопросы атомной науки и техники. — 2001. — № 6. — С. 144-146. — Бібліогр.: 5 назв. — англ.
Підтримка:
The authors acknowledge the financial support from the Russian Foundation for Basic Research under grant № 00-02-17523 and Ukraine Ministry of Education and Science “Program of the works on atomic science and technique” NSC KIPT, 2001-2002, project №04/32.
Дата:
2001
Переглядів:
771
Завантажень:
401
Анотація:
The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out. The existence of scattering direction, where one can observe the scattering intensity independence on the crystallographic plane orientation is shown. Besides the existence of crystallographic axis orientation, where one can observe the region of uniform angle distribution of scattering intensity, is shown.
