Перегляд за автором "Evtukh, A.A."

Сортувати за: Порядок: Результатів:

  • Charge characteristics of the MOS structures with oxide films containing Si nanocrystals 
    Begun, E.V.; Bratus’, O.L.; Evtukh, A.A.; Kaganovich, E.B.; Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The processes of charge accumulation in the MOS structures with SiO₂ films containing Si nanocrystals are investigated, depending on the conditions of their formation by pulsed laser deposition. High-frequency capacity-voltage ...
  • Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals 
    Bratus, O.L.; Evtukh, A.A.; Steblova, O.V.; Prokopchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the ...
  • Field emission of electrons from laser produced silicon tip arrays 
    Evtukh, A.A.; Kaganovich, E.B.; Litovchenko, V.G.; Litvin, Yu.M.; Fedin, D.V.; Manoilov, E.G.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The new preparation method of silicon tips with nanocomposite structure, namely laser modification of silicon is developed. The laser direct-write process has been applied, one by one (single) laser pulses formed the single ...
  • Increase of planar homogeneity of multi-silicon structures by gettering treatments 
    Litovchenko, V.G.; Efremov, A.A.; Evtukh, A.A.; Rassamakin, Yu.V.; Klyui, M.I.; Kostylov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high ...
  • Investigations of impurity gettering in multicrystalline silicon 
    Evtukh, A.A.; Litovchenko, V.G.; Oberemok, A.S.; Popov, V.G.; Rassamakin, Yu.V.; Romanyuk, B.N.; Volkov, S.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface ...
  • Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review) 
    Parphenyuk, P.V.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and ...
  • Structural properties of nanocomposite SiO₂(Si) films obtained by ion-plasma sputtering and thermal annealing 
    Bratus, O.L.; Evtukh, A.A.; Lytvyn, O.S.; Voitovych, M.V.; Yukhymchuk, V.О. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The nanocomposite SiO₂(Si) films containing Si nanoclusters inside insulating SiO₂matrix are promising for many nanoelectronics applications. The ion-plasma sputtering of Si in O₂ containing gas mixture and following thermal ...
  • The influence of H₂S and H₂ adsorption on characteristics of MIS structures with Si porous layers 
    Solntsev, V.S.; Gorbanyuk, T.I.; Litovchenko, V.G.; Evtukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The adsorboelectric effect arising in multilayered semiconductor structures based on the porous Si with catalytically active Pd electrodes due to action of low concentrations of hydrogen containing gases (Н₂, H₂S) at the ...
  • Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing 
    Steblova, O.V.; Evtukh, A.A.; Bratus’, O.I.; Fedorenko, L.L.; Voitovych, M.V.; Lytvyn, O.S.; Gavrylyuk, O.O.; Semchuk, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx ...