Vlasov, S.I.; Ovsyannikov, A.V.; Ismailov, B.K.; Kuchkarov, B.H.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
We investigated the effect of hydrostatic pressure on relaxation characteristics
of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min
exposure to a pressure of 8 kbars results in reduction of the ...