Перегляд за автором "Sachenko, A.V."

Сортувати за: Порядок: Результатів:

  • A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures 
    Sachenko, A.V.; Kryuchenko, Yu.V.; Manoilov, E.G.; Kaganovich, E.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, ...
  • Analysis of features of recombination mechanisms in silicon solar cells 
    Korkishko, R.M.; Kostylyov, V.P.; Prima, N.A.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Investigated in this paper are theoretical and experimental spectral dependences of the short-circuit current as well as small-signal photo-e.m.f. in silicon solar cells. The authors have considered two constructions of ...
  • Analysis of the silicon solar cells efficiency. Type of doping and level optimization 
    Sachenko, A.V.; Kostylyov, V.P.; Gerasymenko, M.V.; Korkishko, R.M.; Kulish, M.R.; Slipchenko, M.I.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination ...
  • Characteristics of confined exciton states in silicon quantum wires 
    Korbutyak, D.V.; Kryuchenko, Yu.V.; Kupchak, I.M.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within ...
  • Conversion efficiency in silicon solar cells with spatially non-uniform doping 
    Sachenko, A.V.; Prima, N.A.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown ...
  • Effect of emitter proprties on the conversion efficiency of silicon solar cells 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into ...
  • Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon 
    Gorban, A.P.; Sachenko, A.V.; Kostylyov, V.P.; Prima, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and ...
  • Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN 
    Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Zhigunov, V.S.; Konakova, R.V.; Panteleev, V.N.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. ...
  • Efficiency a-Si:H solar cell. Detailed theory 
    Kryuchenko, Yu.V.; Sachenko, A.V.; Bobyl, A.V.; Kostylyov, V.P.; Romanets, P.N.; Sokolovskyi, I.O.; Shkrebti, A.I.; Terukov, E.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the ...
  • Efficiency limit for diffusion silicon solar cells at concentrated illumination 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V.; Serba, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive ...
  • Evaluation of the efficiency of interband radiative recombination in high quality Si 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small ...
  • Exciton effects in band-edge electroluminescence of silicon barrier structures 
    Sachenko, A.V.; Gorban, A.P.; Korbutyak, D.V.; Kostylyov, V.P.; Kryuchenko, Yu.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen ...
  • Exciton-enhanced recombination in silicon at high concentrations of charge carriers 
    Sachenko, A.V.; Gorban, A.P.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation ...
  • Excitonic effects in band-edge luminescence of semiconductors at room temperatures 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott ...
  • Experimental study and theoretical analysis of photoelectric characteristics of AlxGa₁₋xAs–p-GaAs–n-GaAs-based photoconverters with relief interfaces 
    Dmitruk, N.L.; Borkovskaya, O.Yu.; Kostylyov, V.E.; Sachenko, A.V.; Sokolovskiy, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We studied experimentally the photoelectric characteristics of the AlxGa₁₋xAs–p-GaAs–n-GaAs structures with relief interfaces. A theoretical analysis of spectral dependences of internal quantum efficiency of short-circuit ...
  • Influence of nanostructured ITO films on surface recombination processes in silicon solar cells 
    Kostylyov, V.P.; Sachenko, A.V.; Serba, O.A.; Slusar, T.V.; Vlasyuk, V.M.; Tytarenko, P.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This paper describes the results of comparative studies of illumination currentvoltage characteristics and spectral characteristics of silicon solar cells with rear location of the collector p-n-junction for the cases of ...
  • Investigation of electrical c haracteristics of heteroepitaxial structures as a function of microrelief and manufacturing technology features 
    Dmitruk, N.L.; Karimov, A.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Over a wide temperature range (77…400 K), we studied I-V curves of photoelectric converter (solar cell) prototypes made on the basis of p-AlxGa₁-xAs– p-GaAs–n-GaAs–n⁺-GaAs heteroepitaxial structures grown on smooth or ...
  • Investigation of resistance formation mechanisms for contacts to n-AlN and n-GaN with a high dislocation density 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Naumov, A.V.; Panteleev, V.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We studied temperature dependences of the resistivity, Pc(T) , of Pd-Ti-Pd-Au ohmic contacts to wide-gap semiconductors n - GaN and n - AlN with a high dislocation density. BothPc(T) curves have portions of exponential ...
  • Lateral multijunction photovoltaic cells 
    Sachenko, A.V.; Kulish, M.R.; Sokolovskyi, I.O.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this work, features of solar cells of lateral type were analyzed. The authors offered a design of a monolithic compact solar module with cells electrically connected in series and with a dispersion element (holographic ...
  • Luminescent converter of solar light into electrical energy. Review 
    Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...