Перегляд за автором "Rodionov, V.E."

Сортувати за: Порядок: Результатів:

  • 3C-6H transformation in heated cubic silicon carbide 3C-SiC 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov ...
  • 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after ...
  • Boron, aluminum, nitrogen, oxygen impurities in silicon carbide 
    Vlaskina, S.I.; Vlaskin, V.I.; Podlasov, S.A.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during ...
  • Effect of annealing mode on ZnS-Cu,CI properties 
    Bacherikov, Yu.Yu.; Golovina, I.S.; Kitsyuk, N.V.; Mukhlyo, M.A.; Rodionov, V.E.; Stadnyk, O.A. (Functional Materials, 2004)
    Influence of annealing modes on spectral characteristics of photoluminescence, elec -troluminescence, and electron spin resonance of ZnS:CuCI and ZnS:CuCI₂ powders has been studied. The thermal doping processes and structure ...
  • External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Influence of plastic deformation and high-temperature annealing (T = 2100 °C, t = 1 h) on SiC crystals with grown polytypic junctions demonstrating SF and DL spectra have been presented. SF-i and DL-i type luminescence are ...
  • Flexible electroluminescent panels 
    Vlaskin, V.I.; Vlaskina, S.I.; Koval, O.Yu.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Recently developed ac ZnS-powder electroluminescence (EL) devices have flexibility (thickness is about 60 µm) and can be multisegment, multicolor, as well as rolled and bent. All colors (white, blue, blue-green, green, ...
  • Nanocrystalline silicon carbide films for solar cells 
    Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • Nanostructures in lightly doped silicon carbide crystals with polytypic defects 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, L.V.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    In this work, photoluminescence spectra of lightly doped SiC crystals with ingrown original defects are reported. Undoped SiC single crystals with the impurity concentration of ND – NA ~ (2…8)*10¹⁶ cm⁻³, NA ~ (2…8)*10¹⁷ ...
  • Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects 
    Vlaskina, S.I.; Mishinova, G.N.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Phase transformations of SiC crystals and thin films with in-grown original defects have been studied. The analysis of absorption, excitation and low-temperature photoluminescence spectra testifies to formation of new ...
  • Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics ...
  • Photostimulated Ga diffusion in zinc sulfide 
    Bacherikov, Yu.Yu.; Optasyuk, S.V.; Rodionov, V.E.; Stadnik, A.A. (Functional Materials, 2004)
    Effect of coherent illumination (using LGI-23 and LGN-222 lasers) of ZnS powders during thermal annealing on zinc sulfide structure properties and on Ga diffusion in ZnS has been studied using photoluminescence method. The ...
  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Silicon carbide phase transition in as-grown 3C-6H polytypes junction 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Svechnikov, G.S.; Rodionov, V.E.; Lee, S.W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation ...
  • Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with ...
  • Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    In this work, the results of investigations of DLi spectra in α-SiC crystals and films with a low impurity concentration have been presented. Photoluminescence spectra of lightly doped SiC single crystals and films with ...