Перегляд за автором "Osiyuk, I.N."

Результати 1-7 з 7

Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs

Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the ...
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure

Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

Forward and reverse currents in the heterostructure “amorphous SiC/p-Si” were studied in the temperature range 30 – 80 K. It has been found that in different ranges of the applied voltage the transport current is described ...
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.N.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions

Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.M.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

Lysenko, V.S.; Tyagulsky, I.P.; Osiyuk, I.N.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It ...
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide-silicon light-emitting diodes with plasma treatment

Nazarov, A.N.; Skorupa, W.; Vovk, Ja.N.; Osiyuk, I.N.; Tkachenko, A.S.; Tyagulskii, I.P.; Lysenko, V.S.; Gebel, T.; Rebohle, L.; Yankov, R.A.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide silicon (MOS) devices and the charge trapping processes occurring therein. Under ...
Properties of SiGe/Si heterostructures fabricated by ion implantation technique

Gomeniuk, Y.V.; Lysenko, V.S.; Osiyuk, I.N.; Tyagulski, I.P.; Valakh, M.Ya.; Yukhimchuk, V.A.; Willander, M.; Patel, C.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate ...

Результати 1-7 з 7

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Перегляд за автором "Osiyuk, I.N."

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