Перегляд за автором "Misiuk, A."

Результати 1-8 з 8

Defects in high temperature and high pressure processed Si:N revealed by deuterium plasma treatment

Misiuk, A.; Barcz, A.; Ulyashin, A.; Prujszczyk, M.; Bak-Misiuk, J.; Formanek, P. (Физика и техника высоких давлений, 2010)

Deuterium is accumulated by defects in nitrogen-implanted silicon (Si:N). This effect is investigated for Si:N processed at HT ≤ 1400 K, also under enhanced hydrostatic pressure, HP ≤ 1.1 GPa. Si:N was prepared from ...
Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure

Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)

Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...
Ferromagnetic nanoclusters in Si:Mn and GaMnAs annealed at high temperature–pressure

Bak-Misiuk, J.; Romanowski, P.; Domagala, J.; Misiuk, A.; Dynowska, E.; Lusakowska, E.; Barcz, A.; Sadowski, J.; Caliebe, W. (2009)

We report the results of defect structures studies of silicon implanted at different temperatures with Mn ions (Si:Mn) and of GaMnAs layers, next annealed under ambient and high pressures. An influence of annealing conditions ...
Hydrogen gettering in annealed oxygen-implanted silicon

Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
Pressure-induced structural transformations in Si:V and Si:V, Mn

Misiuk, A.; Barcz, A.; Chow, L.; Bak-Misiuk, J.; Romanowski, P.; Shalimov, A.; Wnuk, A.; Surma, B.; Vanfleet, R.; Prujszczyk, M. (Физика и техника высоких давлений, 2008)

Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) ...
Pressure-induced transformations during annealing of silicon implanted with oxygen

Misiuk, A.; Efros, B.M. (Физика и техника высоких давлений, 2006)

Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. ...
Silicon based materials for spintronics prepared by implantation and temperature - (pressure) treatment

Misiuk, A.; Ch. Lee (Functional Materials, 2008)

This work reviews the hitherto published and new results concerning the compositional, structural and magnetic properties of single crystal Si irradiated/implanted with non-magnetic atoms and, especially, with medium dosage ...
Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing

Datsenko, L.I.; Auleytner, J.; Misiuk, A.; Klad'ko, V.P.; Machulin, V.F.; Bak-Misiuk, J.; Zymierska, D.; Antonova, I.V.; Melnyk, V.M.; Popov, V.P.; Czosnyka, T.; Choinski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...

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