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періодичних видань НАН України
періодичних видань НАН України
Pressure-induced structural transformations in Si:V and Si:V, Mn
Репозиторій DSpace/Manakin
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Pressure-induced structural transformations in Si:V and Si:V, Mn
Інший ID:
PACS: 61.72.Tt, 61.72.–y, 62.50.+p, 78.30.Am
Посилання:
Pressure-induced structural transformations in Si:V and Si:V, Mn / A. Misiuk, A. Barcz, L. Chow, J. Bak-Misiuk, P. Romanowski, A. Shalimov, A. Wnuk, B. Surma, R. Vanfleet, M. Prujszczyk // Физика и техника высоких давлений. — 2008. — Т. 18, № 4. — С. 105-111. — Бібліогр.: 12 назв. — англ.
Підтримка:
The authors thank Dr. W.K. Chu and Dr. Z.H. Zhang from the Department of Physics and Texas Centre for Superconductivity, University of Houston, Houston, TX 12345 for their help in preparation of the samples.
Дата:
2008
Переглядів:
1200
Завантажень:
648
Анотація:
Semiconductors doped with magnetically active atoms are expected to find application in spintronics. Si samples implanted with Mn⁺ (Si:Mn) or with V⁺ (Si:V) can order magnetically after processing at high temperature (HT) and also under enhanced hydrostatic pressure (HP). This work presents new results on structure-related properties of single crystalline Si implanted at 200 keV with V⁺ as well as that co-implanted additionally with Mn⁺ ions (Si:V, Mn), with dosages DV⁺ ≤ 5·10¹⁵ cm⁻² and DMn⁺ = 1·10¹⁵ cm⁻². The samples were processed for 1–5 h at HT ≤ 1270 K under HP ≤ 1.1 GPa. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy, X-ray and related methods were applied for sample characterization. The HT- (HP) treatment affects, among others, solid phase epitaxial re-growth (SPER) of amorphous silicon created at implantation and distribution of implanted species.
