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Pressure-induced transformations during annealing of silicon implanted with oxygen
Репозиторій DSpace/Manakin
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Pressure-induced transformations during annealing of silicon implanted with oxygen
Інший ID:
PACS: 61.10.−i, 61.72.Yx, 81.40.Vw
Посилання:
Pressure-induced transformations during annealing of silicon implanted with oxygen / A. Misiuk, B.M. Efros // Физика и техника высоких давлений. — 2006. — Т. 16, № 4. — С. 49-63. — Бібліогр.: 40 назв. — англ.
Підтримка:
The author thanks D. Sc. A. Barcz, Dr J. Ratajczak, and Mr M. Prujszczyk (Institute of Electron Technology, Warsaw, Poland), Dr I.V. Antonova (ISP, RAS, Novosibirsk, Russia), and m. sc. B. Surma (IEMT, Warsaw, Poland) for technical assistance, experimental data and valuable discussion.
Дата:
2006
Переглядів:
925
Завантажень:
821
Анотація:
Enhanced hydrostatic pressure (HP, up to 1.5 GPa) applied during annealing at up to 1570 K (HT) of silicon with oxygen introduced by implantation (Si:O), exerts pronounced effect on the transformation of oxygen admixture. In particular, HP affects the microstructure of Si:O and a creation of oxygen-enriched (for implanted oxygen dose, D ≤ 1·10¹⁷ cm⁻²) or continuous (for D ≥ 6·10¹⁷ cm⁻²) buried SiO2 layers. Numerous treatment parameters contribute to the HP-induced phenomena in processed Si:O, among these are the HPaffected mobility and solubility of implanted oxygen as well as of silicon interstitials and of other implantation-induced defects and so the stability of oxygen clusters/precipitates; the misfit at the SiO₂/Si boundary is tuned by HP.
