Перегляд за автором "Kulibaba, V.I."

Сортувати за: Порядок: Результатів:

  • Angular distributions of gamma-radiation of 1.2 GeV electrons in silicon monocrystals of great thickness 
    Bochek, G.L.; Fomin, S.P.; Kulibaba, V.I.; Lapko, V.P.; Maslov, N.I.; Shramenko, B.I.; Shul’ga, N.F. (Вопросы атомной науки и техники, 2001)
  • Characteristics and radiation tolerance of a double-sided microstrip detector with polysilicon biasing resistors 
    de Haas, A.P.; Kuijer, P.; Kulibaba, V.I.; Maslov, N.I.; Perevertailo, V.L.; Ovchinnik, V.D.; Potin, S.M.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2000)
    The characteristics and radiation tolerance of a double-sided microstrip detector (DSMD) were studied, and the suitability of the detector to the ALICE experiment requirements was analyzed. The sensitive area of the silicon ...
  • Control complex for a double-sided microstrip detector production and tests 
    Kaplij, A.A.; Kulibaba, V.I.; Kuijer, P.; Maslov, N.I.; Ovchinnik, V.D.; Potin, S.M.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2000)
    The controlling system for detector silicon and for a double-sided microstrip detectors (DSMD) characteristics tests is described.
  • Development and application of a silicon coordinate detectors 
    Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Potin, S.M.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2003)
    An attempt is made to consider general approach and the techniques for development, investigation and application of multichannel silicon coordinate detectors.
  • Examination ofmulti-layer silicon detector in measurementofelectron spectrumfor beta-decayof ⁹⁰SR- ⁹⁰Y 
    Bochek, G.L.; Golovash, A.S.; Kosinov, A.V.; Kotlyar, V.V.; Kulibaba, V.I.; Maslov, N.I.; Mazilov, A.A.; Naumov, S.V.; Ovchinnik, V.D. (Вопросы атомной науки и техники, 2005)
    Brief survey of recent achievements in investigations of nuclear beta decays is given with some emphasis on superallowed 0⁺→ 0⁺ Fermi transitions between T=1 nuclear states. Progress in construction of a detecting system ...
  • Gamma-radiation spectra of 1200MeV electrons in thick beryllium, silicon and tungsten single crystals 
    Bochek, G.L.; Deiev, O.S.; Kulibaba, V.I.; Maslov, N.I.; Ovchinnik, V.D.; Potin, S.M.; Schramenko, B.I. (Вопросы атомной науки и техники, 2019)
    Gamma radiation spectra of 1200MeV electrons from the single crystals of the beryllium 1.2mm thick, silicon 1.5mm and 15mm thick and tungsten 1.18mm thick along of the crystallographic axes were measured. Also spectral-angular ...
  • Intensive X-ray source optimization 
    Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Ovchinnik, V.D. (Вопросы атомной науки и техники, 2005)
    Possibility of optimization of an intensive source of the electron radiation in crystals based on the Compton scattering of X-radiation is considered.
  • On the opportunity of β-radiation detection by SI detectors in the Chernobyl failure area 
    Kulibaba, V.I.; Mazilov, A.A.; Maslov, N.I. (Вопросы атомной науки и техники, 2006)
    It is demonstrated that a double silicon detector operating in the coincidence mode [1,2] can be used in radiationmonitoring instruments for registering β-radiation at high γ-background conditions, e.g., in Chernobyl.
  • Orientation effects in ultrarelativistic electron transmission through a single crystal 
    Blazhevich, S.V.; Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Shramenko, B.I. (Вопросы атомной науки и техники, 2001)
    The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under ...
  • Photonuclear transmutation doping of the n-type detector silicon 
    Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Ovchinnik, V.D.; Potin, S.M.; Ryabka, P.M. (Вопросы атомной науки и техники, 2002)
    New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority ...
  • Readout electronics for multichannel detectors 
    Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Prokhorets, I.M. (Вопросы атомной науки и техники, 2001)
    Readout electronics based on the 128-channel chip “Viking” (IDE AS inc., Norway) is considered. The chip “Viking” integrates 128 low noise charge-sensitive preamplifiers with tunable CR-(RC)² shapers, analog memory and ...
  • Silicon pad detectors for a simple tracking system and multiplicity detectors creation 
    Bochek, G.L.; Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Starodubtsev, A.F. (Вопросы атомной науки и техники, 2001)
    Silicon pad detectors are working at room temperatures, what is very convenient for creation of simple tracking system and multiplicity detectors. Silicon pad detectors are studied to create a compact detecting systems for ...
  • Temperature effect on the characteristics and lifetime of semiconductor detectors 
    Vasiliyev, G.P.; Kosinov, A.V.; Kulibaba, V.I.; Maslov, N.I.; Naumov, S.V.; Ovchinnik, V.D.; Yalovenko, V.I. (Вопросы атомной науки и техники, 2006)
    The paper reports the results from studies into the effect of temperature on the performance characteristics of planar silicon detectors designed and manufactured at the NSC KIPT. A variety of techniques are demonstrated ...