Перегляд за автором "Kryuchenko, Yu.V."

Сортувати за: Порядок: Результатів:

  • A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures 
    Sachenko, A.V.; Kryuchenko, Yu.V.; Manoilov, E.G.; Kaganovich, E.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, ...
  • Characteristics of confined exciton states in silicon quantum wires 
    Korbutyak, D.V.; Kryuchenko, Yu.V.; Kupchak, I.M.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We have studied theoretically the combined effect of quantum confinement and "dielectric enhancement" on the characteristics of the exciton ground state in quasi-1D silicon nanowires. Consideration has been made within ...
  • Efficiency a-Si:H solar cell. Detailed theory 
    Kryuchenko, Yu.V.; Sachenko, A.V.; Bobyl, A.V.; Kostylyov, V.P.; Romanets, P.N.; Sokolovskyi, I.O.; Shkrebti, A.I.; Terukov, E.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the ...
  • Evaluation of the efficiency of interband radiative recombination in high quality Si 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small ...
  • Exciton effects in band-edge electroluminescence of silicon barrier structures 
    Sachenko, A.V.; Gorban, A.P.; Korbutyak, D.V.; Kostylyov, V.P.; Kryuchenko, Yu.V.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A theoretical analysis of the band-edge electroluminescence efficiency in silicon diodes and p-i-n-structures has been made. We have shown that maximal possible efficiency can achieve 10 % both at room and liquid nitrogen ...
  • Excitonic effects in band-edge luminescence of semiconductors at room temperatures 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott ...
  • Excitons and trions in spherical semiconductor quantum dots 
    Kupchak, I.M.; Kryuchenko, Yu.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An original iterative procedure has been developed to obtain energy spectrum of neutral and charged excitons (positive and negative trions) in spherical semiconductor quantum dots (QD) imbedded into a dielectric material. ...
  • Influence of g-irradiation on photoluminescence spectra of CdTe:Cl 
    Vakhnyak, N.D.; Krylyuk, S.G.; Kryuchenko, Yu.V.; Kupchak, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For ...
  • Light emission by point dipole located inside spherical (semiconductor) particle in the vicinity of a spherical metal particle 
    Kryuchenko, Yu.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Proposed in this work is a theoretical model that enables to correctly calculate light emission characteristics of a hybrid nanosystem formed by a spherical semiconductor quantum dot (QD) and spherical metal nanoparticle ...