Перегляд за автором "Glinchuk, K.D."

Сортувати за: Порядок: Результатів:

  • Analysis of luminescence method applicability for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical fundamentals are analyzed for the method of determination of Cd₁₋xZnxTe composition x from measurements of the luminescence band peak position, emission being caused by annihilation of bound exciton - shallow ...
  • Analysis of luminescence method for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A detailed analysis of the method for determination of Cd₁₋xZnxTe composition x from measurements of 4.2 K peak position of the emission band induced by annihilation of excitons bound with neutral shallow acceptors is ...
  • Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors 
    Glinchuk, K.D.; Prokhorovich, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound ...
  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • On the origin of 300 K near-band-edge luminescence in CdTe 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in ...
  • Review of a monographs 
    Glinchuk, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation ...