Перегляд за автором "Flandre, D."

Сортувати за: Порядок: Результатів:

  • An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications 
    Houk, Yu.; Iniguez, B.; Flandre, D.; Nazarov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An accumulation mode SOI pMOSFET model for simulation of analog circuits meant for high-temperature applications is presented in the paper. The model is based on explicit expressions for the drain current with an infinite ...
  • Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation 
    Houk, Y.; Nazarov, A.N.; Turchanikov, V.I.; Lysenko, V.S.; Andriaensen, S.; Flandre, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the ...
  • Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs 
    Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.; Popov, V.; Ilnitsky, M.; Lysenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one ...