Перегляд за автором "Sachenko, A.V."

Сортувати за: Порядок: Результатів:

  • Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kuchuk, A.V.; Korostinskay, T.V.; Pilipchuk, A.S.; Sheremet, V.N.; Mazur, Yu.I.; Ware, M.E.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that ...
  • Modeling of photo-conversion efficiency for hydrogenated amorphous Si p-i-n structures 
    Sachenko, A.V.; Sokolovskyi, I.O.; Kazakevitch, A.; Shkrebtii, A.I.; Gaspari, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An analytical formalism to optimize the photoconversion efficiency η of hydrogenated amorphous silicon-based (a-Si:H) solar cells has been developed. This model allows firstly the optimization of a p⁺ -i-n sandwich in ...
  • New formalism for self-consistent parameters optimization of highly efficient solar cells 
    Sachenko, A.V.; Kostylyov, V.P.; Kulish, M.R.; Sokolovsky, L.O.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We analyzed self-consistently photoconversion efficiency of direct-gap A³B⁵ semiconductors based solar cells and optimized their main physical characteristics. Using gallium arsenide (GaAs) as an example and new efficient ...
  • Ohmic contacts based on Pd to indium phosphide Gunn diodes 
    Belyaev, A.E.; Boltovets, N.S.; Bobyl, A.V.; Zorenko, A.V.; Arsentiev, I.N.; Kladko, V.P.; Kovtonyuk, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact ...
  • On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Vinogradov, A.O.; Pilipenko, V.A.; Petlitskaya, T.V.; Anischik, V.M.; Konakova, R.V.; Korostinskaya, T.V.; Kostylyov, V.P.; Kudryk, Ya.Ya.; Lyapin, V.G.; Romanets, P.N.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. ...
  • On the collection of photocurrent in solar cells with a contact grid 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator 
    Sachenko, A.V.; Kostylyov, V.P.; Korkishko, R.M.; Kulish, M.R.; Sokolovskyi, I.O.; Vlasiuk, V.M.; Khomenko, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant ...
  • Photoconversion efficiency of quantum-well solar cells for the optimum doping level of a base 
    Sachenko, A.V.; Sokolovskyi, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Analytical expressions for the maximum obtainable photoconversion efficiency of quantum-well solar cells (QWSCs) under AM0 conditions are given. The modeling of the photoconversion efficiency of QWSCs under AM1.5 ...
  • Photoeffect Peculiarities in Macroporous Silicon Structures 
    Karachevtseva, L.A.; Onyshchenko, V.F.; Sachenko, A.V. (Хімія, фізика та технологія поверхні, 2010)
    The effects of increase in photoconductivity in the macroporous silicon structures have been examined as a function of the distance between cylinder macropores. The ratio of macroporous silicon photoconductivity to bulk ...
  • Polarization unstabilities in a quasi-isotropic He-Ne laser in axial magnetic field 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP 
    Belyaev, A.E.; Boltovets, N.A.; Bobyl, A.B.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Nasyrov, M.U.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared ...
  • Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In ...
  • The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes 
    Sachenko, A.V.; Kostylyov, V.P.; Vlasiuk, V.M.; Sokolovskyi, I.O.; Evstigneev, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when ...
  • The study of solar cells with back side contacts at low illumination 
    Gorban, A.P.; Kostylyov, V.P.; Litovchenko, V.G.; Sachenko, A.V.; Serba, A.A.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Theoretical analysis and experimental research of Si solar cells (SC) with interdigitated back side contacts (BSC) photovoltaic parameters and photoconversion efficiency at low light level have been done in presence of ...