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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Vakhnyak, N.D."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Vakhnyak, N.D."

Сортувати за: Порядок: Результатів:

  • Comparison of optical properties of TiO₂ thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques 
    Brus, V.V.; Kovalyuk, Z.D.; Parfenyuk, O.A.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The envelope method was used to determine optical constants of TiO₂ thin films deposited by DC reactive magnetron sputtering and electron-beam evaporation techniques. The density and thickness of the thin films were ...
  • Influence of Cr doping on optical and photoluminescent properties of CdTe 
    Ilashchuk, М.I.; Parfenyuk, O.A.; Ulyanytskiy, K.S.; Brus, V.V.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional ...
  • Influence of g-irradiation on photoluminescence spectra of CdTe:Cl 
    Vakhnyak, N.D.; Krylyuk, S.G.; Kryuchenko, Yu.V.; Kupchak, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Photoluminescence properties of high-resistivity CdTe:Cl crystals irradiated with g-rays have been studied. An enhancement of near-edge luminescence intensity is observed after a low dose g-irradiation (D < 10 kGy). For ...
  • Influence of low-temperature annealing on the state of CdTe surface 
    Parfenyuk, O.A.; Ilashchuk, M.I.; Chupyra, S.M.; Burachek, V.R.; Korbutyak, D.V.; Krylyuk, S.G.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances ...
  • Influence of ytterbium impurity on luminescent properties of ZnSe〈Al〉 crystals 
    Makhniy, V.P.; Vakhnyak, N.D.; Kinzerska, O.V.; Senko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor ...
  • Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells 
    Brus, V.V.; Maryanchuk, P.D.; Parfenyuk, O.A.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent ...

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