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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Tiagulskyi, S.I."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за автором "Tiagulskyi, S.I."

Сортувати за: Порядок: Результатів:

  • Direct synthesized graphene-like film on SiO₂: Mechanical and optical properties 
    Bortchagovsky, E.G.; Vasin, A.V.; Lytvyn, P.M.; Tiagulskyi, S.I.; Slobodian, A.M.; Verovsky, I.N.; Strelchuk, V.V.; Stubrov, Yu.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Exploiting CVD technique for carbon deposition from C₂H₂+H₂+N₂ mixture, a graphene-like film synthesized directly on SiO₂ surface of SiO₂-Si structure was obtained. The graphene-like film was grown under thin Ni layer that ...
  • Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.N.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    In this paper we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...
  • Electroluminescent properties of Tb-doped carbon-enriched silicon oxide 
    Tiagulskyi, S.I.; Nazarov, A.N.; Gordienk, S.O.; Vasin, A.V.; Rusavsky, A.V.; Nazarova, T.M.; Gomeniuk, Yu.V.; Rudko, G.V.; Lysenko, V.S.; Rebohle, L.; Voelskow, M.; Skorupa, W.; Koshka, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    An electroluminescent device utilizing a heterostructure of amorphous terbium doped carbon-rich SiOx (a - SiOx : C : Tb) on silicon has been developed. The a - SiOx : C : Tb active layer was formed by RF magnetron ...
  • Erratum: Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions 
    Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.M.; Rebohle, L.; Skorupa, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this paper, we explore the electrophysical and electroluminescence (EL) properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺ and C⁺ ions. The implanting fluencies were chosen in such a way ...

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