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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs 
    Lysenko, V.S.; Rudenko, T.E.; Nazarov, A.N.; Kilchitskaya, V.I.; Rudenko, A.N.; Limanov, A.B.; Colinge, J.-P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The characteristics of enhancement-mode MOS transistors fabricated on zone-melting recrystallized (ZMR) silicon-on-insulator (SOI) films were systematically experimentally investigated in the temperature range 25–300°C. ...
  • High-temperature configurations of dimers in Si (001) surface layers 
    Kiv, A.E.; Maksymova, T.I.; Moiseenko, N.V.; Soloviev, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical ...
  • High-temperature expansion in self-consistent-field theory of spin-crossover compounds 
    Gudyma, Iu.V.; Daskal, Ye.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In the paper, spin-crossover compounds were examined from the viewpoint of perturbation theory for self-consistent field. The research carried out in the framework of the Ising-like model for these compounds. We have ...
  • High-temperature injection spectroscopy of deep traps in CdTe polycrystalline films 
    Opanasyuk, A.S.; Opanasyuk, N.N.; Tirkusova, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper provides the direct experimental method to determine the localized state energy distribution function for semiconducting solid materials based on space-charge-limited current-voltage characteristics. The ...
  • Holographic interferometry as a method to study conformational changes in macromolecules 
    Barabash, Y.; Kharkyanen, V.; Zabolotny, M.; Sokolov, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    This paper concerns with our measurements of reaction center (RC) volume changes in the course of photoactivation using the method of holographic interferometry. As a principal value, we studied changes of a solution ...
  • Holographic interferometry under phase distortions 
    Derzhypolska, L.A.; Gnatovskiy, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An impact of non-stationary phase distortions in transfer section of a holographic interferometer on the quality of formed interference fringes in an interferogram was under investigation. A mathematical model to analyze ...
  • Hopping conductivity in GaSe monocrystals at low temperatures 
    Pashayev, A.M.; Gadjiyev, A.R.; Tagiyev, T.B.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. ...
  • Hot wall growth and properties of lead telluride films doped by germanium and gallium 
    Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • How the phosphorus chains impact on the vibrational properties of diphosphides ZnP₂ and CdP₂ at low temperatures 
    Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The temperature dependence of the vibrational modes in the diphosphides ZnP₂ and CdP₂ has been studied by employing IR reflectance spectroscopy within the 4…300 K temperature range in the polarized radiation. It has been ...
  • Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range 
    Zorenko, A.V.; Bychok, A.V.; Shynkarenko, V.V.; Kudryk, Ya.Ya.; Slipokurov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A finline version of detector with flat Schottky barrier diodes is developed. It is intended for operation in the 400600 GHz frequency range. The detector electrical parameters are studied. The detector conversion ratio ...
  • Hybrid-integrated version of solid-state components for terahertz frequency region 
    Zorenko, O.V.; Bychok, A.V.; Kryts’ka, T.V.; Kudryk, Ya.Ya.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    We present the results of development of key components for THz devices obtained using mathematical modeling of detector sections, radiation source and subharmonic mixers. Schottky barrier diodes with different parameters ...
  • Hydrogen gettering in annealed oxygen-implanted silicon 
    Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
  • Hydrogenic impurity in a bilayer spherical quantum dot 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the work, on the basis of the exact solution of the Poisson equation for a bilayer quantum dot with a positively charged donor ion in its centre, determined is the potential energy of interaction of this impurity ion ...
  • Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers 
    Nazarov, A.N.; Lysenko, V.S.; Nazarova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of micro- and nanoelectronics. The especial ...
  • Hydrothermal synthesis and properties of titania nanotubes doped with Fe, Ni, Zn, Cd, Mn 
    Kulish, M.R.; Struzhko, V.L.; Bryksa, V.P.; Murashko, A.V.; Il’in, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Fe/TiO₂, Mn/TiO₂, Zn/TiO₂, Cd/TiO₂, Ni/TiO₂ titania nanotubes were synthesized by the method of direct hydrothermal synthesis. Their properties have been investigated using X-ray phase analysis and X-ray fluorescent analysis, ...
  • III-V material solar cells for space application 
    Torchynska, T.V.; Polupan, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The present paper is a review of current situation in space solar cell engineering. The comparison of the Si and III-V solar cell performances, as well as their parameter variation with temperature rise, radiation treatments ...
  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Image infrared converters based on ferroelectric- semiconductor thin-layer systems 
    Sosnin, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Some questions concerning pyroelectric sensors application in microphotoelectronics are considered. Data upon main characteristics of different pyroelectric materials (single crystals, ceramics, thin films) are summarized. ...
  • Impact of sidewall spacer on gate leakage behavior of nano-scale MOSFETs 
    Rana, A.K.; Chand, N.; Kapoor, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Semiconductor devices with a low gate leakage current are preferred for low power application. As the devices are scaled down, sidewall spacer for CMOS transistor in nano-domain becomes increasingly critical and plays ...
  • Impedance anisotropy and quantum photocapacity of bio/inorganic clathrates InSe〈histidine〉 and gase〈histidine〉 
    Ivashchyshyn, F.O.; Grygorchak, I.I.; Klapchuk, M.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Intercalated nanostructures of InSe〈histidine〉 and GaSe〈histidine〉 were formed. Phenomena of the negative capacitance and the quantum capacitance are visualized in the first nanostructure. The introduction of histidine ...

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