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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Zero bias terahertz and subterahertz detector operating at room temperature 
    Momot, N.; Zabudsky, V.; Tsybrii, Z.; Apats’ka, M.; Smoliy, M.; Dmytruk, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range ...
  • Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method 
    Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The nanocomposite – nanoporous silica (SBA-16) containing ZnO quantum dots – was fabricated by the sublimation method. This novel route of synthesizing ZnO nanoparticles implies physical sorption of zinc acetylacetonate ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...
  • ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure 
    Semikina, T.V.; Mamykin, S.V.; Godlewski, M.; Luka, G.; Pietruszka, R.; Kopalko, K.; Krajewski, T.A.; Gierałtowska, S.; Wachnicki, L.; Shmyryeva, L.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated ...
  • ZnTe-based UV sensors 
    Pavelets, S.Yu.; Bobrenko, Yu.N.; Semikina, T.V.; Sheremetova, G.I.; Atdaiev, В.S.; Krulikovska, K.B.; Mazin, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal ...
  • Аutomated method for determining the etch pits density on crystallographic planes of large semiconductor crystals 
    Pekar, G.S.; Singaevsky, А.А.; Singaevsky, А.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A method for express automatic evaluation of the dislocation density on the crystal surfaces has been developed. The work involves creation of a software that allows automatical determining the number of etch pits with a ...
  • Сhemiluminescent display 
    Jaguiro, P.; Stsiapanau, A.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Investigation of organic liquid phase electroluminescence (traditionally, the so-called “electro-chemiluminescence” or “electrogenerated chemiluminescence”) is of special interest as a competitor for “liquid” and “solid” ...

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