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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Saddle point excitonic resonances in BiI3 layered single crystals 
    Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
  • Saturation of optical absorption in CdS single crystals 
    Malysh, N. I.; Kunets, V. P.; Valiukh, S. I.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the ...
  • Scattering and birefringence properties of polymeric films modified with nanoparticles of different nature 
    Agabekov, V.E.; Ivanova, N.A.; Kosmacheva, T.G.; Dlugunovich, V.A.; Tsaruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Scattering properties of directed polyvinyl alcohol films modified with titanium dioxide or silver nanoparticles and illuminated by a 0.63 μm linear polarized He-Ne laser radiation were investigated. Ability of the ...
  • Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS 
    Freik, D.M.; Nykyruy, L.I.; Shperun, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ...
  • Science and technology excimer laser complex and examples of its applications 
    Baschenko, S.M.; Blonskiy, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Science and technology multi-purposes, wide-functional excimer laser complex consisting of two precisely and fine synchronized excimer lasers and assembled on the common optical table and added by high efficient Stimulated ...
  • Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions 
    Zorenko, Yu.; Limarenko, L.; Konstankevych, I.; Pashkovsky, M.; Moroz, Z.; Solsky, I.; Grinev, B.; Nekrasov, V.; Borodenko, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Investigated are optical, luminescent and light-technical properties of the CdWO₄ and Bi₄Ge₃O₁₂ single crystals doped with mercury-like Bi³⁺ and Pb²⁺ impurities, respectively, with the aim of assertaining the possibility ...
  • Scintillators based on zinc selenide and ticor for detection of charged particles 
    Ryzhikov, V.D.; Danshin, E.A.; Starzhinski, N.G.; Losseva, E.A.; Chernikov, V.V.; Litvinov, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Studies of charged particle detectors based on ZnSe(Te) and Al₂O₃(Ti⁺³) (ticor) optically connected with photodiodes (PD) of S3590 type are reported. The charge-sensitive preamplifier connected with PD had equivalent noise ...
  • Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality 
    Tovstyuk, N.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. ...
  • Screen-printed p-CdTe layers for CdS/CdTe solar cells 
    Klad'ko, V.P.; Lytvyn, P.M.; Osipyonok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes ...
  • Search of mode wavelengths in planar waveguides by using Fourier transform of wave equation 
    Fitio, V.M.; Romakh, V.V.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The article describes a numerical method based on Fourier transform for studying propagating optical waves in dielectric planar waveguides. The inverse problem to the known direct one in waveguide investigation is proposed, ...
  • Seebeck’s effect in p-SiGe whisker samples 
    Dolgolenko, A.P.; Druzhinin, A.A.; Karpenko, A.Ya.; Nichkalo, S.I.; Ostrovsky, I.P.; Litovchenko, P.G.; Litovchenko, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval ...
  • Selective polarization of ferroelectrics in functional electronics 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The selective polarization technique of ferroelectrics representing sound-conductors and piezoelectric transformers in different devices of functional electronics is described. The feature of the technique is the ability ...
  • Selective unequal-thickness thin-film filters for IR spectral region 
    Yaremchuk, I.Ya.; Fitio, V.M.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    A new five-layer structure of the dielectric interference filter for the infra-red region of spectrum is investigated. The main spectral parameters of such a narrow-band filter are determined. The dependence of the ...
  • Self-consistent method for optimization of parameters of diode temperature sensors 
    Kulish, N.R.; Shwarts, Yu.M.; Borblik, V.L.; Venger, Ye.F.; Sokolov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the framework of the diffusion transport model through an abrupt asymmetric p n-junction, the ideality factor of which is assumed to be equal to unity, and with the help of criteria commonly used to describe theoretically ...
  • Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization 
    Naumov, A.V.; Kolomys, O.F.; Romanyuk, A.S.; Tsykaniuk, B.I.; Strelchuk, V.V.; Trius, M.P.; Avksentyev, A.Yu.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The effect of self-heating on the transport characteristics and electronic properties of transistor AlGaN/GaN heterostructures was investigated. The electrical, micro-Raman and photoluminescence techniques were used for ...
  • Self-organization patterns in electroluminescence of bistable ZnS:Mn thin-film structures 
    Vlasenko, N.A.; Purwins, H.-G.; Denisova, Z.L.; Kononets, Ya.F.; Niedernostheide, F.-J.; Veligura, L.I.; Zuccaro, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    An overview of recent original results concerning self-organized pattern formation in the emission of bistable alternating current ZnS:Mn thin - film electroluminescent structures (TFELS) as a dissipative system is given. ...
  • Self-organized nanostructured anodic oxides for display applications 
    Jaguiro, P.; Stsiapanau, A.; Hubarevich, A.; Mukha, Y.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Electrochemical technologies have a high potential for display applications because of their cheapness and simplicity, easiness to scaling to large substrates and lowtemperature nature. However, in major display technologies ...
  • Self-purification effect in CdTe:Gd crystals 
    Nikonyuk, E.S.; Shlyakhovyi, V.L.; Kovalets, M.O.; Kuchma, M.I.; Zakharuk, Z.I.; Savchuk, A.I.; Yuriychuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The temperature dependences (T = 80 – 420 K) of the concentration of charge carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by the Bridgman method are studied. It is found that the ...
  • Semiconductor sensors for dosimetry of epithermal neutrons 
    Litovchenko, P.G.; Moss, R.; Stecher-Rasmussen, F.; Appelman, K.; Barabash, L.I.; Kibkalo, T.I.; Lastovetsky, V.F.; Litovchenko, A.P.; Pinkovska, M.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes ...
  • Sensor based on a non-ideal heterojunction to indicate X-ray images 
    Smyntyna, V.A.; Borschak, V.A.; Kutalova, M.I.; Zatovskaya, N.P.; Balaban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is ...

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