Katrunov, K.; Starzhinskiy, N.; Grinyov, B.; Galchinetskii, L.; Bendeberya, G.; Bondarenko, E.
(Functional Materials, 2008)
Data on optical and electrophysical properties of photosensitive structures with Schottky barrier of nZnSe(O, Te)/Ni type are presented. The photoreceivers of this type have current sensitivity Sλ = 0.1-0.15 A/W for λ = ...