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Перегляд Functional Materials, 2007, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Functional Materials, 2007, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Adsorption of cholic acid on silica modified with benzyltrimethylammonium groups 
    Roik, N.V.; Belyakova, L.A.; Varvarin, A.M. (Functional Materials, 2007)
    Chemical fixation of benzyltrimethylammonium groups on vinyl silica surface has been realized using a copolymerization reaction. It has been found that cholic acid is better adsorbed on the modified silica than on ...
  • Application of the Judd-Ofelt theory to Pr³⁺ ions in Y₂SiO₅ crystals 
    Zhmurin, P.N. (Functional Materials, 2007)
    The results of the Judd-Ofelt theory application to Pr³⁺ doped Y₂SiO₅ are presented. For the first time for this matrix, the Ω₂, Ω₄, Ω₆ parameters have been determined and radiative lifetimes of ³P₀ and ¹D₂ multiplet states ...
  • Cryogenic synthesis of nanodimensional magetite 
    Gorbyk, P.P.; Dubrovin, I.V.; Filonenko, M.M. (Functional Materials, 2007)
    Low temperature synthesis of single-domain magnetite particles at the liquid-solid interface was developed. Spherical particles of crystalline magnetite with size of 6-50 nm were prepared. Investigation of phase and element ...
  • CsI(TI) films: deposition, examination of structure and scintillation 
    Lebedinsky, A.; Fedorov, A.; Ananenko, A.; Mateychenko, P. (Functional Materials, 2007)
    The sublimation of the bulk CsI crystal with optimal activator concentration istead of powder source use at vacuum deposition of CsI(TI) films has been shown to provide CsI(TI) films with required content and uniform ...
  • Effect of magnetic field on microhardness of germanium 
    Makara, V.A.; Steblenko, L.P.; Kuryliuk, A.M.; Naumenko, S.M.; Kolchenko, Iu.L.; Kravchenko, V.M. (Functional Materials, 2007)
    Microhardness variations in germanium crystals caused by a weak constant magnetic field have been studied. It is fount that the magnetomechanical effect, that is relative change in microhardness, becomes relaxed in time. ...
  • Electrophysical properties of polymer composites penton-silver iodide system in 8-12 GHz frequency region 
    Rokitsky, M.A.; Gorbyk, P.P.; Levandovsky, V.V.; Makhno, S.M.; Kondratenko, O.V.; Shut, N.I. (Functional Materials, 2007)
    The heat field influence on electrophysical properties of polymer composites of the penton — dispersed silver iodide (Agl) system at volume filling from 0 to 100 % have been studied in 8-12 GHz frequency range. It has been ...
  • Excess conductivity and pseudogap state in YBa₂Cu₃-yAlyO₇₋δ single crystals with a system of undirectional twin boundaries 
    Vovk, R.V.; Obolenskii, M.A.; Bondarenko, A.V. (Functional Materials, 2007)
    The conductivity in the basis plane of YBa₂Cu₃-yAlyO₇₋δ single crystals with a pre-specified topology of plane defects has been investigated. The results indicate that the doping with Al results in increased number of the ...
  • Influence of domain structure on relaxation phenomena in the PZT ceramic 
    Brus, B.; Ilczhuk, J.; Zarycka, A.; Czerwiec, M. (Functional Materials, 2007)
    The temperature dependences of internal friction in PZT ceramics have been obtained in a wide temperature range from the room temperature to that exceeding the phase transition point from ferroelectric to paraelectric ...
  • Influence of structural relaxation on the performance of Co-Based amorphous metallic alloys 
    Zakharenko, M.I.; Semen`ko, M.P.; Yeremenko, G.V. (Functional Materials, 2007)
    The influence of structural relaxation on the electric resistivity p and structure parameters of low-alloyed Co—Cr—Si—B amorphous metallic alloys has been studied. These materials show a minimum in p(T) dependences. It has ...
  • Luminescent properties and stability of Eu²⁺ ions in SrBPO₅ and SrAl₂B₂O₇ 
    Pir, P.V.; Dotsenko, V.P.; Efryushina, N.P; Klimenko, Z.D. (Functional Materials, 2007)
    Using the luminescence spectroscopy, the stability of Eu²⁺ ions in SrBPO₅ has been shown to exceed significantly that in SrAl₂B₂O₇. The luminescence spectrum of Eu²⁺ in SrBPO₅ and SrAl₂B₂O₇ consists of a broad band with a ...
  • Minimal Fermi model 
    Naplekov, D.M.; Tur, A.V.; Yanovsky, V.V. (Functional Materials, 2007)
    In this work, we consider the simple model for Fermi acceleration of a particle between two periodically oscillating walls, The law of wall movement is continuous but not smooth. Exact mapping for this system has been ...
  • Optimization of base crystals for silicon solar cells of various destinations 
    Kirichenko, M.V.; Tymchuk, I.T.; Antova, V.A.; Klochko, N.P.; Kopach, V.R.; Listratenko, A.M. (Functional Materials, 2007)
    The spectral dependences of reflection coefficient R(λ) for various light-receiving surface texture types ("inverted pyramids" and "V-grooves") of single crystal silicon wafers are presented as well as output and diode ...
  • Peculiarities of the PbTe nano-islet formation on BaF₂ substrate at "hot wall" epitaxy method investigated by atomic force microscopy 
    Sheremeta, T.I.; Prokopenko, I.V.; Lytvyn, P.M.; Lytvyn, O.S.; Vodop`yanov, V.M.; Bakhtinov, A.P.; Shyn`ko, E.I. (Functional Materials, 2007)
    Peculiarities of PbTe nano-islet films formation on BaF₂ (111) fresh cleavages by hot wall epitaxy deposition have been investigated using atomic force microscopy. It has been shown that various growth mechanisms could be ...
  • Photocatalysis by TiO₂ films at structure relaxation 
    Dmytrenko, O.P.; Kulish, N.P.; Busko, T.O.; Stashchuk, V.S.; Eremenko, A.M.; Smirnova, N.P.; Vityuk, N.V. (Functional Materials, 2007)
    The crystalline and electron structure of TiO₂ and TiO₂/ZrO₂/SiO₂ coating obtained by sol-gel technique and annealed at 773 K and 873 K has been studied. The film synthesis and further heat treatment result in formation ...
  • Physico-mechanical and physicochemical interaction at sintering of cBN-TiB₂ composites under ultrahigh pressure 
    Garbuz, T.O.; Bezhenar, M.P.; Bozhko, S.A.; Bilyavina, N.M. (Functional Materials, 2007)
    It has been shown in experiment that at the reactive sintering of cubic boron nitride with aluminum under high pressures and temperatures, addition of TiB₂ results in shifting of the reaction towards crystallization of ...
  • Short-range atomic order in f.c.c-Ni-9 at.% Al solid solution 
    Bokoch, S.M.; Kulish, M.P.; Ryashko, V.V.; Snagovskiy, O.V.; Tatarenko, V.A. (Functional Materials, 2007)
    The short-range atomic order for a single crystal of f.c.c.—Ni-9 at.% Al solid solution quenched from 1073 K, as well as the short-range order transformations initial stages during isothermal annealing at 373 K have been ...
  • Structure and magnetoresistance of freshly condensed three-layer NiFe/Cu(Ag)/NiFe films 
    Loboda, V.B.; Shkurdoda, Yu.A.; Kravchenko, V.A. (Functional Materials, 2007)
    Phase composition and magnetoresistive effect (the longitudinal and transversal magnetoresistance (MC) have been studied in freshly condensed three-layer FeNi/Cu(Ag)/FeNi films having dFeNi of 10 to 50 nm, dcu.Ag of 1 to ...
  • Structure features and fracture mechanisms of hexagonal boron nitride based composite materials 
    Vishnyakov, L.R.; Mazna, A.V.; Sinaisky, B.M.; Vereschaka, V.M. (Functional Materials, 2007)
    The structure and fracture mechanisms of hexagonal boron nitride based composite materials with formation of new phases (mullite and sialon) during hot pressing has been studied. The composite microstructure was found to ...
  • The aggregation of point defetc in dislocation-free silicon single crystals 
    Talanin, V.I.; Talanin, I.E.; Voronin, A.A.; Sirota, A.V. (Functional Materials, 2007)
    The formation kinetics for grown-in microdefects nucleation centers in dislocation-free silicon single crystals has been considered. It has been demonstrated that the diffusion-controlled aggregation of point defects defines ...
  • The given level attainment problem and material destruction 
    Yastrubenko, M.I. (Functional Materials, 2007)
    In frameworks of percolation scenario of material destruction, the general stochastic model is proposed. It is connected with the so-called attainment problem of the given level E > 0 in the case of independent, equally ...

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