Photoresponse in Ge/Si nanostructures with quantum dots

dc.contributor.author	Nikolenko, A.S.
dc.contributor.author	Kondratenko, S.V.
dc.contributor.author	Vakulenko, O.V.
dc.date.accessioned	2017-06-14T17:23:27Z
dc.date.available	2017-06-14T17:23:27Z
dc.date.issued	2006
dc.identifier.citation	Photoresponse in Ge/Si nanostructures with quantum dots / A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 1. — С. 32-35. — Бібліогр.: 21 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.63.-8, 73.63.Kv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121590
dc.description.abstract	Photovoltaic properties of Si samples with Ge quantum dots were studied. Photosensitivity spectra and current-voltage characteristics at 90 and 290 K were investigated. Negative photoconductivity of samples was revealed in the spectral range of 0.6 to 1.1 eV. Irregular temperature dependence of photo-emf in the temperature interval from 100 to 250 K was measured and analyzed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photoresponse in Ge/Si nanostructures with quantum dots	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA