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dc.contributor.author |
Iliash, S.A. |
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dc.contributor.author |
Kondratenko, S.V. |
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dc.contributor.author |
Yakovliev, A.S. |
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dc.contributor.author |
Kunets, Vas.P. |
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dc.contributor.author |
Mazur, Yu.I. |
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dc.contributor.author |
Salamo, G.J. |
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dc.date.accessioned |
2017-06-14T15:20:39Z |
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dc.date.available |
2017-06-14T15:20:39Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures / S.A. Iliash, S.V. Kondratenko, A.S. Yakovliev, Vas.P. Kunets, Yu.I. Mazur, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 75-78. — Бібліогр.: 7 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
DOI: 10.15407/spqeo19.01.075 |
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dc.identifier.other |
PACS 72.40.+w, 73.40.-e, 73.63.Nm |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121528 |
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dc.description.abstract |
Thermally stimulated conductivity of the InGaAs-GaAs heterostructures with quantum wires was studied using different quantum energies of exciting illumination. The structures reveal long-term photoconductivity decay within the temperature range 100 to 200 K, and effect of residual conductivity after turning-off the illumination. Analyzing the data of thermally stimulated conductivity, the following energies of electron traps were found: 90, 140, and 317 meV. The role of deep traps in recombination process as well as the photoconductivity mechanism was discussed. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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