Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3
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| dc.contributor.author | Seitmuratov, M.S. | |
| dc.contributor.author | Klad'ko, V.P. | |
| dc.contributor.author | Gudymenko, O.I. | |
| dc.contributor.author | Datsenko, L.I. | |
| dc.contributor.author | Prokopenko, I.V. | |
| dc.date.accessioned | 2017-06-13T17:30:10Z | |
| dc.date.available | 2017-06-13T17:30:10Z | |
| dc.date.issued | 2002 | |
| dc.identifier.citation | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals / M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 258-260. — Бібліогр.: 10 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 61.66, 61.80 | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/121243 | |
| dc.description.abstract | Using the technique of diffuse x-ray scattering at the "tails" of diffraction reflection curves, we analyze the effect of irradiation of dislocation GaAs crystals with high-energy neutrons on evolution of radiation clusters as a function of fluence and doping level. The effect of doping level on size of the above defects is shown to be considerable at low fluences. We advance a model for disordered regions in an irradiated crystal based on the results of x-ray experiments. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
