The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 3
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dc.contributor.author	Deibuk, V.G.
dc.contributor.author	Korolyuk, Yu.G.
dc.date.accessioned	2017-06-13T17:29:07Z
dc.date.available	2017-06-13T17:29:07Z
dc.date.issued	2002
dc.identifier.citation	The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 64.75.+g , 65.50.+m , 68.60.Dv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121241
dc.description.abstract	Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin solid films. The results of the classical molecular dynamic simulations are in good agreement with experimental data and other ab-initio calculations. The effect of layer thickness have great influence on the miscibility gap.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA