Influence of ion implantation and annealing on composition and structure of GaAs surface

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 2
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dc.contributor.author	Normuradov, M.T.
dc.contributor.author	Umirzakov, B.E.
dc.contributor.author	Tashmukhamedova, D.A.
dc.contributor.author	Tashatov, A.K.
dc.date.accessioned	2017-06-13T16:39:22Z
dc.date.available	2017-06-13T16:39:22Z
dc.date.issued	2002
dc.identifier.citation	Influence of ion implantation and annealing on composition and structure of GaAs surface / M.T. Normuradov, B.E. Umirzakov, D.A. Tashmukhamedova, A.K. Tashatov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 138-141. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.V, 61.80.-x, 79.60.-i
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121184
dc.description.abstract	In this work investigated is the influence of barium ion implantation and subsequent annealing on composition, electronic and crystalline structure of GaAs surface. For the first time, the influence of low energy Ba⁺ ions implantation on the structure of GaAs surface was investigated using photoelectron spectroscopy. Determined are parameters of energy bands and the crystalline lattice of the three-component system Ga₀.₆Ba₀.₄As. The width of the forbidden gap is Eg = 1 eV, the lattice constant is a = 5.73 Å.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of ion implantation and annealing on composition and structure of GaAs surface	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA