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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1 за датою випуску

Сортувати за: Порядок: Результатів:

  • Exciton-enhanced recombination in silicon at high concentrations of charge carriers 
    Sachenko, A.V.; Gorban, A.P.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The interrelation between processes of electron-hole recombination and annihilation of excitons in silicon is examined. It is shown, that recombination processes can be essentially influenced by the exciton annihilation ...
  • Strain effect in surface acoustic wave elements with a piezoelectric acoustic line and sensors based on this effect 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of investigations of strain effect in surface acoustic wave (SAW) elements with a piezoelectric ceramic (PC) acoustic line are presented. The choice of PC material for acoustic line is substantiated. Some ...
  • Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon 
    Neimash, V.B.; Puzenko, O.O.; Kraitchinskii, A.M.; Krasko, M.M.; Putselyk, S.; Claeys, C.; Simoen, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations ...
  • Ultrasound effect on radiation damages in boron implanted silicon 
    Romanjuk, B.; Krüger, D.; Melnik, V.; Popov, V.; Olikh, Ya.; Soroka, V.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect ...
  • Development and optical characteristics of the macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for ...
  • Luminescence and photoconductivity of poly-n-epoxypropylcarbazole with intramolecular charge transfer compounds 
    Davidenko, N.A.; Kuvshinsky, N.G.; Syromiatnikov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Features of charges photogeneration in the films of poly-N-epoxypropylcarbazole doped with compounds with intramolecular charge transfer used in holographic recording media are investigated. Influence of an external electric ...
  • Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere 
    Snopok, B. A.; Kostyukevych, K.V.; Beketov, G.V.; Zinio, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The formation of AuxSy interfacial layer by reactive annealing of gold films in H₂S atmosphere is investigated. This seems to be a technologically favorable technique for the large-scale and low-cost fabrication of ...
  • Some features of two-photon absorption in static electric field 
    Griban, V.M.; Melnichuk, O.V.; Ovander, L.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We considered the effect of static uniform electric field on the process of two-photon excitonic absorption of light in crystals. The matrix element that determines the above process was calculated using a linear (in the ...
  • Heterostructure infrared photodiodes 
    Rogalski, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    HgCdTe remains the most important material for infrared photodetectors despite numerous attempts to replace it with alternative materials such as closely related mercury alloys (HgZnTe, HgMnTe), Schottky barriers on silicon, ...
  • Excitonic effects in band-edge luminescence of semiconductors at room temperatures 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    A theoretical analysis is developed for ascertaining the influence of exciton states on edge luminescence in different semiconductors at high temperatures and high levels of excitation. Screening effects and the Mott ...
  • InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures 
    Masselink, W.T.; Kissel, H.; Mueller, U.; Walther, C.; Mazur, Yu.I.; Tarasov, G.G.; Lisitsa, M.P.; Lavoric, S.R.; Zhuchenko, Z.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures ...
  • Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects 
    Masselink, W.T.; Kissel, H.; Mueller, U.; Walther, C.; Mazur, Yu.I.; Tarasov, G.G .; Rudko, G.Yu.; Valakh, M.Ya.; Malyarchuk, V.; Zhuchenko, Z.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Photoluminescence (PL) study of pseudomorphic heavily modulation-doped AlxGa₁₋xAs/InyGa₁-yAs/GaAs heterostructures shows fundamental changes in the PL spectrum under excitation pumping and/or temperature increase. In most ...
  • Photoresponse of Schottky-barrier detector under strong IR laser excitation 
    Asmontas, S.; Seliuta, D.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation ...
  • Diffraction of optical beams by a half-plane 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Rigorous solution of the optical beam diffraction problem on half plane is represented. Solution is described to representation of edge dislocation wave (EDW) that was introduced for describing the diffraction plane wave ...
  • Residual error after non-uniformity correction 
    Borovytsky, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The paper represents the technique for residual error evaluation after two-points linear non-uniformity correction. This technique takes into consideration parameters of an imaging system, reference sources, non-linearity ...
  • Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution 
    Selishchev, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution ...
  • Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation 
    Gnatyuk, V.A.; Gorodnychenko, O.S.; Mozol, P.O.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The effect of nanosecond ruby laser pulses on the photoelectric and electrical properties of GaAs and InSb single crystals with different pre-treated surfaces was studied. The photoconductivity, surface recombination rate ...
  • AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers 
    Beketov, G.V.; Rashkovetskiy, L.V.; Rengevych, O.V.; Zhovnir, G.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology ...
  • Laser – induced donor centers in p-InSb 
    Fedorenko, L.; Medvid, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the ...
  • Infrared detectors: outlook and means 
    Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    New materials and technologies for large scale IR arrays, readouts for them and several principal trends of IR large scale array detectors development as well as their applications in different weather conditions are briefly ...

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