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AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers

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dc.contributor.author Beketov, G.V.
dc.contributor.author Rashkovetskiy, L.V.
dc.contributor.author Rengevych, O.V.
dc.contributor.author Zhovnir, G.I.
dc.date.accessioned 2017-06-11T13:26:43Z
dc.date.available 2017-06-11T13:26:43Z
dc.date.issued 2000
dc.identifier.citation AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers / G.V. Beketov, L.V. Rashkovetskiy, O.V. Rengevych, G.I. Zhovnir // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 45-51. — Бібліогр.: 16 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 68.65, 81.05. E, 81.15. L
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/120233
dc.description.abstract Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology during different steps of LPE growth was studied using scanning probe microscopy. Various growth features including monomolecular steps were observed. Both scanning probe microscopy (SPM) images and surface composition analysis with X-ray fluorescence spectroscopy clearly showed that vapor phase growth at the melt homogenization step contributed to epilayer formation and further evolution of its morphology. It was found that formation of flat areas proceeds via a dislocation-controlled monomolecular step growth mechanism. Phenomenological estimation of local supersaturation conditions giving rise to these areas was given on the basis of the interstep distance of the growth spirals originating from screw dislocations. The results obtained suggest the way of radical morphological improvement of the LPE-grown epilayers. uk_UA
dc.description.sponsorship Authors would like to thank Dr. S. Kavertsev for helpful discussions and suggestions during the course of this work and to Dr. P. Lytvyn for measurements and iterpretation of X-ray fluorescence spectra. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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