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dc.contributor.author |
Selishchev, P.A. |
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dc.date.accessioned |
2017-06-11T13:17:47Z |
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dc.date.available |
2017-06-11T13:17:47Z |
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dc.date.issued |
2000 |
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dc.identifier.citation |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution / P.A. Selishchev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 19-21. — Бібліогр.: 10 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 36.40. M, 61.66, 61.72. T, 68.65 |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120230 |
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dc.description.abstract |
Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution of oxygen and its complexes. It is shown that due to the interaction of oxygen interstitials and their complexes the homogeneous state becomes unstable at some conditions, and spatial periodical distribution develops. Its period lies in the range of 10-1000 Å . |
uk_UA |
dc.description.sponsorship |
The author are grateful to O.A. Leontev for his contributuions to technical providing the work. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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