Current flow mechanisms in p-i-n­ structures based on cadmium telluride

dc.contributor.author	Gorley, P.M.
dc.contributor.author	Demych, M.V.
dc.contributor.author	Makhniy, V.P.
dc.contributor.author	Horvath, Zs.J.
dc.contributor.author	Shenderovsky, V.A.
dc.date.accessioned	2017-06-07T12:35:03Z
dc.date.available	2017-06-07T12:35:03Z
dc.date.issued	2002
dc.identifier.citation	Current flow mechanisms in p-i-n structures based on cadmium telluride / P.M. Gorley, M.V. Demych, V.P. Makhniy, Zs.J. Horvath, V.A. Shenderovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 46-50. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 73.40.-c,73.40.Ty
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119566
dc.description.abstract	Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as trapping, impact ionization and overbarrier carriers transport in the dark current formation of samples studies have been defined.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Current flow mechanisms in p-i-n structures based on cadmium telluride	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA