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Investigation of ArF* excimer laser VUV radiation action on sapphire

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dc.contributor.author Baschenko, S.M.
dc.contributor.author Gochelashvili, K.S.
dc.contributor.author Zakirov, R.M.
dc.contributor.author Klimov, V.I.
dc.contributor.author Mikhkelsoo, V.T.
dc.contributor.author Prokhorov, O.M.
dc.date.accessioned 2017-06-06T13:05:18Z
dc.date.available 2017-06-06T13:05:18Z
dc.date.issued 2001
dc.identifier.citation Investigation of ArF* excimer laser VUV radiation action on sapphire / S.M. Baschenko, K.S. Gochelashvili, R.M. Zakirov, V.I. Klimov, V.T. Mikhkelsoo, O.M. Prokhorov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 290-297. — Бібліогр.: 14 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 32.50; 42.55.L; 79.20.D
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119330
dc.description.abstract Aluminium components of products escaped from the surface of a sapphire target being illuminated by VUV emission of an ArF* laser are investigated using the method of laser-induced fluorescence combined with the transient time technique. Relative concentrations of aluminium atoms and ions as well as their distribution on velocities in the flow are measured. Determined is also the temperature and velocity of aluminium atoms. It is ascertained that within the range of used energy densities of 0.45 to 1.0 J/cm² extraction of materials can be made in three regimes, namely: the ablation, the plasma and mixed ones, intertransitions between them being of a cyclic character. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Investigation of ArF* excimer laser VUV radiation action on sapphire uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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