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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Behaviour of manganese impurity in β-ZnP₂ 
    Kakazej, M.; Kudin, A.; Pinkovs’ka, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure ...
  • Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them 
    Boltovets, N.S.; Voitsikhovskyi, D.I.; Konakova, R.V.; Milenin, V.V.; Makara, V.A.; Rudenko, O.V.; Mel’nichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface ...
  • Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons 
    Vasetskii, V.M.; Poroshin, V.N.; Ignatenko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier ...
  • Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration 
    Bogoboyashchyy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the ...
  • Dynamics of photoinduced instability in ferroelectric photorefractive crystals 
    Morozovska, A.N.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the paper we theoretically consider the dynamics of the inner field generated by recharging trap waves propagation and spatial-temporal features of the photoinduced light scattering caused by these phenomena in the ...
  • Electrooptical properties of liquid crystal n-pentil-n´-cyanobifenil with J-aggregates of astrofloxine 
    Piryatinski, Yu.P.; Furier, M.S.; Nazarenko, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It is shown that organic nanocrystallites - J-aggregates - can be formed and oriented in a liquid crystalline matrix. External electric field can reorient and destroy these nanocrystallites. Transmission and photoluminescence ...
  • Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy 
    Chegel’, V.I.; Shirshov, Yu.M.; Kostyukevich, S.O.; Shepeliavy, P.E.; Chegel', Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Surface plasmon resonance (SPR) was first applied for investigation of the initial stage kinetics of the chemical processes in inorganic resist based on thin-film Ag-As₂S₃ structure. This method enabled to measure optical ...
  • Features of optical properties of ferromagnetic semiconductors with dynamic laser-induced gratings 
    Semchuk, O.Yu.; Veskliarskii, R.Z.; Kosharskii, K.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Nonlinear optical phenomena in ferromagnetic semiconductor with dynamic grating created by coherent light beams are investigated. A high-frequency current and nonlinear absorption coefficient are calculated. It is shown ...
  • Group delay investigation of N-order chirping mirrors 
    Lysak, V.V.; Sukhoivanov, I.A.; Petrov, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We present the numerical calculation of N-order chirping mirrors with chirping both high and low refractive index layers using the transfer matrix method. The group delay and group delay dispersion are investigated for ...
  • Hopping conductivity in GaSe monocrystals at low temperatures 
    Pashayev, A.M.; Gadjiyev, A.R.; Tagiyev, T.B.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. ...
  • Influence of phonon dispersion on exciton damping in ionic crystals 
    Grigorchuk, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The manifestation of phonon dispersion on frequency and temperature dependence of exciton damping is investigated theoretically for the models of crystal with the large and small exciton radii. The correlation between the ...
  • Investigation of ArF* excimer laser VUV radiation action on sapphire 
    Baschenko, S.M.; Gochelashvili, K.S.; Zakirov, R.M.; Klimov, V.I.; Mikhkelsoo, V.T.; Prokhorov, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Aluminium components of products escaped from the surface of a sapphire target being illuminated by VUV emission of an ArF* laser are investigated using the method of laser-induced fluorescence combined with the transient ...
  • Investigations of impurity gettering in multicrystalline silicon 
    Evtukh, A.A.; Litovchenko, V.G.; Oberemok, A.S.; Popov, V.G.; Rassamakin, Yu.V.; Romanyuk, B.N.; Volkov, S.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface ...
  • Microwave-induced optical non-linearity of amino acid crystals 
    Berezhinsky, L.I.; Dovbeshko, G.I.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Changes (ΔR) of amino acid crystals infrared (IR) reflectance (R) induced by simultaneous irradiation of IR and microwaves (MW) or extremely high frequency (EHF) radiation have been observed. It was shown that under the ...
  • New method of apertured electromagnetic field modeling 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using a new wave treatment of rigorous Sommerfield’s solution for a problem of plane wave diffraction on a perfectly conductive half-plane, it was obtained the solution for a problem of plane wave diffraction on a slit and ...
  • Optical and protective properties of different type diamond and diamond-like carbon films 
    Semikina, T.V.; Shmyryeva, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Comparative analyses of diamond and diamond like carbon film optical properties prepared by laser and chemical vapor deposition methods are represented in this work. It was obtained that DF and DLC films have optical ...
  • Optical transmittance of 2D macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.O.; Malovichko, E.O.; Stronska, O.J.; Busaneva, E.V.; Gorchinsky, O.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Optical transmittance by 2D macroporous silicon structures was investigated in direction parallel to pores. Absolute photonic band gap was measured for wavelengths between one and two optical periods of macroporous silicon ...
  • Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system 
    Konakova, R.V.; Milenin, V.V.; Voitsikhovskyi, D.I.; Kamalov, A.B.; Kolyadina, E.Yu.; Lytvyn, P.M.; Lytvyn, O.S.; Matveeva, L.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, V.O.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact 
    Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky ...

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