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dc.contributor.author Karachevtseva, L.A.
dc.contributor.author Lytvynenko, O.O.
dc.contributor.author Malovichko, E.O.
dc.contributor.author Stronska, O.J.
dc.contributor.author Busaneva, E.V.
dc.contributor.author Gorchinsky, O.D.
dc.date.accessioned 2017-06-06T12:57:37Z
dc.date.available 2017-06-06T12:57:37Z
dc.date.issued 2001
dc.identifier.citation Optical transmittance of 2D macroporous silicon structures / L.A. Karachevtseva, O.O. Lytvynenko, E.O. Malovichko, O.J. Stronska, E.V. Busaneva, O.D. Gorchinsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 347-351. — Бібліогр.: 17 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 71.25.Rk, 81.60Cp
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119327
dc.description.abstract Optical transmittance by 2D macroporous silicon structures was investigated in direction parallel to pores. Absolute photonic band gap was measured for wavelengths between one and two optical periods of macroporous silicon structure. For wavelengths less than optical period of macropores there are an essential reduction in transmittance of electromagnetic radiation to (3-6)•10⁻³ apparently the homogeneous material and the step formation. Transmission spectra of macroporous silicon as well as steps were explained by a model of directed and decay optical modes formed by macroporous silicon as a short wave-guide structure with a large contrast in dielectric constants of the macropore and the silicon matrix. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Optical transmittance of 2D macroporous silicon structures uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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