The impact of laser shock waves on anodic oxide - compound semiconductor interface

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4
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dc.contributor.author	Yakovyna, V.S.
dc.contributor.author	Berchenko, N.N.
dc.contributor.author	Nikiforov, Yu.N.
dc.date.accessioned	2017-06-06T12:40:35Z
dc.date.available	2017-06-06T12:40:35Z
dc.date.issued	2001
dc.identifier.citation	The impact of laser shock waves on anodic oxide - compound semiconductor interface / V.S. Yakovyna, N.N. Berchenko, Yu.N. Nikiforov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 283-286. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 62.50.+p, 68.35.Dv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119323
dc.description.abstract	The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this treatment decreases electron concentration in a converted n-type layer by one order of magnitude in annealed AO-MCT based structures, and the annealing time needed to have this layer disappeared decreases as well. The model of LSW impact on the AO-MCT interface is analysed. Remove selected	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The impact of laser shock waves on anodic oxide - compound semiconductor interface	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA