Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons

dc.contributor.author	Vasetskii, V.M.
dc.contributor.author	Poroshin, V.N.
dc.contributor.author	Ignatenko, V.A.
dc.date.accessioned	2017-06-06T11:10:23Z
dc.date.available	2017-06-06T11:10:23Z
dc.date.issued	2001
dc.identifier.citation	Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons / V.M. Vasetskii, V.N. Poroshin, V.A. Ignatenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 260-263. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 42.65.Hw
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119317
dc.description.abstract	We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier heating by infrared radiation.	uk_UA
dc.description.sponsorship	We would like to express our thanks to О. Sarbey and S. Оdoulov for helpful discussions and for critical reading of the manuscript.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA