Direct current transport mechanisms in n-InSe/p-CdTe heterostructure

Abstract

The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current transport mechanisms in the structure. It was shown that misfit dislocations at the boundary between the semiconductors form a stable periodic structure acting as slow recombination centers for the carriers. The properties of the material suggest promising application perspectives for n-InSe/p-CdTe heterojunction, especially for the devices working at high temperatures and elevated radiation.