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dc.contributor.author |
Salo, V.I. |
|
dc.contributor.author |
Tkachenko, V.F. |
|
dc.contributor.author |
Puzikov, V.M. |
|
dc.date.accessioned |
2017-05-31T19:26:16Z |
|
dc.date.available |
2017-05-31T19:26:16Z |
|
dc.date.issued |
2008 |
|
dc.identifier.citation |
Research of Structural Quality of Big-Size KDP Crystals / V. I. Salo, V. F. Tkachenko, V.M. Puzikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2008. — Т. 11, № 2. — С. 132-135. — Бібліогр.: 7 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 61.10.-i |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118853 |
|
dc.description.abstract |
The faulted structure formation at a rapid growing of big-size KDP crystals has
been analyzed. A transitional zone with high degree of lattice faultness has been revealed
between the seed and the pure zone of the grown crystal by X-ray diffraction methods with
high resolution. It has been determined that, regardless of the seed form, the transitional layer
in grown crystals reaches the value of~12 mm. The nonmonotone variation of the crystal
lattice parameter (∆d/d) within ±2.5·10⁻⁵ and the halfwidth of a diffraction reflection curve
(β = 5.5÷8 arcs for direction [103] and β = 7÷9 arcs for direction [100]) and the increase of
the integral power of reflection of the X-ray beam IR
by 1.5 times are observed in the
transitional lay |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Research of Structural Quality of Big-Size KDP Crystals |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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