Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4
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dc.contributor.author	Emad Hameed Hussein
dc.date.accessioned	2017-05-31T19:16:27Z
dc.date.available	2017-05-31T19:16:27Z
dc.date.issued	2009
dc.identifier.citation	Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width / Emad Hameed Hussein // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 424-428. — Бібліогр.: 13 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.-c, 85.60.Dw
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118849
dc.description.abstract	The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode with the depletion layer width have been analyzed. It is shown that the contribution of the time constant and the drift time in the rise time within the depletion layer can be decreased to an optimal value (less than 1ns) just for specific value of the depletion layer width and smaller value of the diffused junction area.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA