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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4
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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4 за назвою

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 4 за назвою

Результати 1-20 з 22

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Analysis of properties of optical carriers after long-term storage

Petrov, V.V.; Kryuchyn, A.A.; Gorbov, I.V.; Kossko, I.O.; Kostyukevych, S.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Performed in this paper is the analysis of possibilities to create optical information carriers for long-term information storage. Adduced are the results of experimental investigations of properties inherent to optical ...
A new method of extraction of a p-n diode series resistance from I-V characteristics and its application to analysis of low-temperature conduction of the diode base

Borblik, V.L.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

A new analytical method of extraction of a diode series resistance from current-voltage characteristics is proposed which takes into account dependence of the series resistance on voltage (or current). The method supposes ...
Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width

Emad Hameed Hussein (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The relationship between response speed of a silicon n-well/p substrate photodiode and the depletion layer width has been investigated. Variation of both the junction capacitance and the series resistance of the photodiode ...
Author Index 2009

Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN

Korotyeyev, V.V.; Syngayivska, G.I.; Kochelap, V.A.; Klimov, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

We analyzed the steady-state electron transport for bulk GaN in frame of two opposite approaches: the electron temperature approach that assumes a high-density electron gas and numerical single-particle Monte-Carlo ...
Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity and Hall-effect

Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Hall-effect and magnetoresistivity of electrons in multi-valley bands of Si and Ge is considered with due regard for direct intervalley drag. Search of contribution of this drag shows that this interactioin sufficiently ...
Fine structure of NQR spectra in GaSe

Kovalyuk, Z.D.; Lastivka, G.I.; Khandozhko, О.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Peculiarities of the observation of nuclear quadrupole resonance (NQR) in GaSe crystals grown from melt are under investigations. The splitting of a resonance NQR line by two identical spectra is caused by the availability ...
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure

Abbasov, Sh.M.; Aghaverdiyeva, G.T.; Ibrahimov, Z.A.; Farajova, U.F.; Ibrahimova, R.A.; Mehdevi, Heyder (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge substrates were investigated. The structural perfection of the films was controlled by electron diffraction, electron microscopic and X-ray ...
Influence of polarization of semiconductor lattice on its optical vibration spectrum

Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Considered in this paper are optical spectra of crystal lattice vibrations in semiconductor solid solutions, which have two vibration bands depending on solution composition. It has been shown that this dependence for ...
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading on the temperature hysteresis of electrophysical characteristics in irradiated n-Si–Fz

Babych, V.М.; Olikh, Ja.М.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Presented in this paper are experimental results of ultrasound treatment (UST) and dynamic ultrasound loading (USL) influences on the electric activity of radiation defects (after y-irradiation) in crystals n-Si–Fz. The ...
Investigation of singularities inherent to Mueller matrix images of biological crystals: diagnostics of their birefringent structure

Misevitch, I.Z.; Ushenko, Yu.O.; Pridiy, O.G.; Motrich, A.V.; Tomka, Yu.Ya.; Dubolazov, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

In this work, we have theoretically grounded conceptions of singularities observed in coordinate distributions of Mueller matrix elements for a network of human tissue biological crystals. Found is interrelation between ...
Local plasmons contribution into photocurrent of Au/GaAs surface barrier structure with Au nanoparticles on interface

Mamykin, S.; Dmitruk, N.; Korovin, A.; Naumenko, D.; Dmytruk, A.; Park, Yeon-Su (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Au/SiO₂ core-shell nanoparticles have been used to increase the photocurrent in the surface barrier structure Au/GaAs. The method for theoretical calculation of interaction between light and the system of ordered ...
On methodology of measuring parameters with the increased sensitivity to residual or irradiation induced inhomogeneities in semiconductors

Gaidar, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Within the frame of theory of anisotropic scattering, it was studied the relation of values for specific resistance changes under the axial elastic deformations for manyvalley semiconductors, n-Ge and n-Si. The aspect ...
Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation

Burbelo, R.; Isaiev, M.; Kuzmich, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The analysis of photothermal conversion in materials with modified properties of surface layer was made in this work. Influence of both physical and geometrical nonlinearities on the process of heat distribution was estimated.
Stacking Faults in the single crystals

Mihir M. Vora; Aditya M. Vora (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The single crystals of InxMoSe₂ (0 ≤ x ≤ 1) and Re-doped MoSe₂ viz. MoRe₀.₀₅Se₁.₉₉₅, MoRe₀.₀₀₁Se₁.₉₉₉ and Mo₀.₉₉₅Re₀.₀₀₅Se₂ have been grown by a direct vapour transport technique (DVT) in the laboratory. Structural ...
Stimulated emission of Cr²⁺ ions in ZnS:Cr thin-film electroluminescent structures

Vlasenko, N.A.; Oleksenko, P.F.; Mukhlyo, M.A.; Veligura, L.I.; Denisova, Z.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

First observation of stimulated Cr²⁺ emission in ZnS:Cr electroluminescent (EL) impact-excited thin-film waveguide structures is reported. The structures consist of the following thin films deposited on a glass substrate: ...
Synthesis and luminescent properties of SrTiO₃:Pr³⁺ phosphors prepared by sol-gel method

Marchylo, O.M.; Zavjalova, L.V.; Nakanishi, Y.; Kominami, H.; Hara, K.; Belyaev, A.E.; Svechnikov, G.S.; Fenenko, L.I.; Poludin, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

New red SrTiO₃:Pr³⁺ phosphor for the field emission displays application was prepared using the sol-gel method. The reaction between starting materials SrCl₂, Ti-(Oi-C₃H₇)₄ and PrCl₃ resulted in a mix of compounds ...
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors

Semchuk, O.Yu.; Gichan, О.І.; Grechko, L.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

Studied in this work is the Rahman-Nat diffraction on a thin grating of refractive index in semiconductor, which was created by an interference pattern of two coherent laser beams. Numeral calculations showed that the ...
Thermodynamic analysis of processes creating the defects in cadmium telluride crystals under conditions of high-temperature annealing

Prokopiv, V.V.; Fochuk, P.M.; Gorichok, I.V.; Vergak, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

The defective structure of specifically undoped cadmium telluride crystals was researched using the theory of thermodynamic potentials. The calculated concentration of point defects and free charge carriers in the CdTe ...
Thin silicon solar cells with SiОх /SiNx Bragg mirror rear surface reflector

Ivanov, I.I.; Nychyporuk, T.V.; Skryshevsky, V.A.; Lemiti, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

. Bragg reflectors consisting of sequence of dielectric layers with a quarter wavelengths optical thickness are promising to create solar cells of third generation. SiОх /SiNx Bragg mirror (BM) at the backside of textured ...

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